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SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
1 2
MIT-4A11A
Package Dimensions
C E
3
Unit : mm
A
4.2
C
4
5.0 1.5
(1.0
(0.3)
2.0
Features
l l l l
Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 2mm
3.9
2.8 5.2
1.50.1Hold 4-0.5 4-0.15 4.0 MIN.
Applications
l l l
*2.54
*4.0
Cameras Floppy disk drives Printer
NOTE
1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base
Absolute Maximum Ratings
Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100
@TA =25oC Unit mA V mW V V mW mW
o
-25 C to + 85 C -40oC to + 100oC 260 C for 3 seconds
o
o
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-4A11A
Optical-Electrical Characteristics
Parameter Input Forward Voltage Reverse Current Output Collector Dark Current
Collector Emitter Saturation Voltage
@TA =25oC symbol VF IR Iceo VCE(SAT) A Min. 0.5 3.0 5.0 7.0 Typ. 1.2 50 50 Max. 1.4 10 100 0.4 4.0 6.0 8.0 10.0 150 150 S S Ic=100A, Vce =5V RL=1K mA IF =20mA, Vce =5V Unit. V A nA V Test Conditions IF =20mA VR =3V Vce =10V Ic=0.1mA,Ee=0.1mW/cm2
Collector Current Transfer Characteristics Response Time (RISE) Response Time (FALL)
Ic
B C D tr tf
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
60 120
Power Dissipation (mW)
50 40 30 20 10 0 -25 0 25 50 75 100
100 80 60 40 20 0 -25
PTOT PD , PC
0
25
50
75
100
Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA)
100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8
Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 Vce=2V Ta=25J
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Collector Current Ic (mA) Relative Collector Current (%)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 2 4 6 120 100 80 60 40 20 0 -25 Ta=25J 20mA IF=15mA 10mA 4mA
Collector Current Ic (mA)
Forward Current IF (mA) Fig.4 Collector Current vs Forward Current
8
10
12
0
25
50
75
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce
Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA
o
100
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-4A11A
Typical Optical-Electrical Characteristic Curves
Collector Dark Current ICEO
10000 VCE=20V 1000 100 10 1 0 25 50 75 100 1000
Response Time (s)
100 10 1
V CE =2V I C =100 A Ta=25 J
0.1 0.01
0.1
1
10
100
Ambient Temperature TA ( J ) Fig.7 Collector Dark Current vs. Ambient Temperature
100
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
Relative Sensitivity (%)
Ta=25J 80 60 40 20 0 700 Input 800 900 1000 1100 1200 Input Output
Response Time Measurement Circuit
t
90 % 10 %
t tr tf IL VR Output VCC
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Sensing Position Characteristics (Typical)
X Y
I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 J
Relative light current IL (%)
100
Ta=25 J
(Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + +
Distance d (mm)
Unity Opto Technology Co., Ltd.
04/01/2002

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